Semiconductor component with a short end structure, which comprises a subtransistor of the semiconductor component, which has a low temperature dependence and method for the manufacture of such a semiconductor device

摘要

The present invention relates to a semiconductor component, the a semiconductor body (1) of a doped semiconductor material having a first zone (5, 8) of a first conductivity type and a to the first zone (5, 8) adjoining second zone (60, 70) of a complementary second conductivity type to the first conductivity type comprises. The first zone (5, 8) and the second zone (60, 70) are connected to a electrically highly conductive layer (3, 4) being connected between the second zone (60, 70) and the electrically highly conductive layer (3, 4), a more than the adjoining regions of the second zone (60, 70) doped connection region (69, 79) of the second conductivity type is arranged, which the second zone (60, 70) and the electrically highly conductive layer (3, 4) electrically connects. In the case in which the first conductivity type of the type "n", there is the connection zone acceptors (68) with an energy level to which, at a temperature of the semiconductor body (1) of 300 k 100 mev to 500 mev by means of the valence band (91) of the semiconductor body (1) is. If the first conductivity type of the type "p" is, the connection zone donors (78) with an energy level (e_D) which at a temperature of the semiconductor body (1) of 300 k 100 mev to 500 mev below the conduction band (92) of the semiconductor body (1) is.