A method for generating a deformed channel region in a transistor by a depth implantation of a deformation induzier ends of the type under the channel region

摘要

By incorporation of a carbon locations at the channel region of a p - channel transistor in front of the production of the gate electrodes structure can be a more efficient deformation inducing mechanism are provided, as a result of which the performance of p - transistors is improved. The position and the size of the deformation induzier ends area, on the basis of an implantation mask and implanting parameters are determined, so that a high degree of compatibility with conventional trechniken is created, since the verformungsinduzuierende area during an early process step can be installed.