Art for the deformation production in the case of silicon-based transistors by the use of implantation techniques for the production of a deformation induzier ends layer under the channel region

摘要

By incorporation of a half conductor locations with the same value and a different covalent radius in the comparison to the base half conductor material by means of an ion implantation process can be a deformation induzier end material locally within a transistor during a suitable process step are arranged, as a result of which is not substantially to the total process complexity is helped and also the further processing of the semiconductor component is not affected. Thus, a high degree of flexibility with regard to improving the holding power transistor can be achieved in very local.