Silicon carbide - a semiconductor device, which contains a silicon carbide - layer, and method for its production

摘要

A p - the basis of an ohmic contact of a silicon carbide - a semiconductor device contains a p + + layer, which is formed by means of a ion implantation is formed at a high concentration, and a metal electrode. Since the ion implantation in the case of high concentration, which is carried out at room temperature, the crystal of the p + + layer significantly impaired, which causes a process, a method is used for implantation in the case of high temperatures. With regard to a switching loss and the like of devices, it is desirable that the resistance value of the p - the basis of ohmic contact should be lower. In the case of known techniques, there is no mention with respect to a detailed relation with respect to the ions - implantation temperature, of the resistance value of the ohmic contact and of the process error. Then, in the case of the ions implant ion - step, the temperature of a silicon carbide - wafers in a range of from 175°C. to 300°C, more preferably in a range of from 175°C. to 200°C, is retained. The resistance value of the p - the basis of ohmic contact, which a p + + region is used, which is formed by means of a ion implantation at a temperature in a range of from 175°C. to 300°C, is smaller than that in a case, in which the p + + region by ion implantation at a temperature of more than 300°C. is carried out. Moreover, this can avoid any faults.