首页> 外国专利> organic du00fcnnschichttransistor, flachbildschirmgeru00e4t and process for the production of organic du00fcnnschichttransistors

organic du00fcnnschichttransistor, flachbildschirmgeru00e4t and process for the production of organic du00fcnnschichttransistors

机译:有机dicht晶体管,flachbildschirmger u00e4t以及生产有机dicht晶体管的方法

摘要

PROBLEM TO BE SOLVED: To provide an organic thin film transistor improved in on/off-ratio or the like while easily obtaining the patterning effect of an organic semiconductor layer.;SOLUTION: The system is provided with a substrate 10, a gate electrode 11 disposed on the substrate 10, a gate insulating film 12 disposed on the electrode 11, a source electrode 13 and a drain electrode 14 spaced from each other and disposed on the film 12, the organic semiconductor layer 15 that makes the electrode 13 contact with the electrode 14 and has terminals that discriminate adjacent organic thin film transistors from one another, and a cantilever layer 16 that is disposed to cover the layer 15, disposed in the same layer as in the layer 15 or at a lower position of the layer 15, and contacts with portion exposed to the outside of the end 15a of the layer 15.;COPYRIGHT: (C)2007,JPO&INPIT
机译:要解决的问题:提供一种在开/关比等方面得到改善的有机薄膜晶体管,同时易于获得有机半导体层的图案化效果。;解决方案:该系统设有衬底10,栅电极11布置在基板10上的栅绝缘膜12,布置在电极11上的栅绝缘膜12,彼此隔开并布置在膜12上的源电极13和漏电极14,使电极13与电极13接触的有机半导体层15。电极14具有端子,该端子将相邻的有机薄膜晶体管彼此区分开;以及悬臂层16,其设置成覆盖层15,该悬臂层16设置在与层15相同的层中或在层15的下部位置并与暴露在第15层末端15a外部的部分接触;版权所有:(C)2007,JPO&INPIT

著录项

  • 公开/公告号DE602006004906D1

    专利类型

  • 公开/公告日2009-03-12

    原文格式PDF

  • 申请/专利权人 SAMSUNG SDI CO. LTD.;

    申请/专利号DE20066004906T

  • 发明设计人 KOO JAE-BON;SUH MIN-CHUL;KIM SUNG-JIN;

    申请日2006-03-17

  • 分类号H01L51/10;

  • 国家 DE

  • 入库时间 2022-08-21 19:08:03

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