Method of manufacturing a structure for a first embodiment, without the exclusion zone.

摘要

The present invention relates to a method of manufacturing a composite structure (13) to epitaxy comprising at least one layer of crystalline seed of growth (11) of material including - conductor on a support substrate (10), the support substrate (10) and the layer of crystalline seed of growth (11) having at the periphery of their face of a chamfer or a zone of which has fallen edge. The process comprises at least one step of molecular bonding (s4) of the layer of the crystal nucleus of growth (11) on the support substrate (10) and at least one step of thinning (s6) of the layer of the crystal nucleus of growth (11), said layer of crystalline seed, of having a diameter after thinning identical to its initial diameter.