Field effect device i.e. silicon-on-nothing transistor, fabricating method, involves releasing and removing upper surface of silica layer to release monocrystalline germanium layer serving as basis to form field effect device

摘要

The method involves forming a monocrystalline silicon-germanium alloy layer on a silicon layer separated from a silicon substrate (1). A monocrystalline germanium layer (13) is obtained by germanium enrichment in the silicon layer from the alloy layer through thermal oxidation such that a silica layer (12) is formed on the germanium layer. A dielectric encapsulating layer (14) made of silicon nitride or resin is deposited to encapsulate a field effect device. An upper surface of the silica layer is released and removed to release the germanium layer serving as a basis to form the device.