Microelectronic component i.e. floating gate transistor, manufacturing method for flash memory device, involves carrying out thermal treatment after deposition of reactive material so that material reacts with zones to form nanocrystals

摘要

The method involves degrading predetermined zones of a silicon based dielectric material layer (1) for forming degraded zones (3). A reactive material is deposited on the layer, where the reactive material is a metal chosen from platinum, nickel, cobalt and titanium. Thermal treatment is carried out after the reactive material is deposited on the layer such that the reactive material reacts with the degraded zones of the layer for forming nanocrystals (5) made of silicide type metallic material, on the layer.