SUBSTRATES SOI WITH INSULATED FINE LAYER ENTERREE

摘要

A method of manufacturing a semiconductor structure 6, 6 ', 6' '' with a thin insulating layer buried, comprising the following steps: implementing a surface treatment of a first substrate 1 and / or a second substrate 2 for preparing a surface 3 'of the first substrate 1 and / or a surface 4' of the second substrate 2 and for forming at least one insulating layer 3, 4 on one and / or the other of said substrates 1 and 2 assembling said first and second substrates 1 and 2, thinning said first substrate 1, in order to obtain said semiconductor structure, characterized in that the surface treatment consists of a plasma treatment based on oxidizing and / or nitriding gas.