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WET PLATING METHOD AND WET PLATING APPARATUS

机译:湿敷方法和湿敷装置

摘要

PROBLEM TO BE SOLVED: To provide a wet plating method which can surely control a concentration of a plating accelerator with a relatively easy means and plate the material uniformly, and to provide a wet plating apparatus.;SOLUTION: This wet plating method includes: measuring AC impedances by using respective plating solutions having different concentrations of the plating accelerator; preparing a characteristic figure (a Bode diagram) showing a relation between a phase difference and a frequency, for each concentration of the plating accelerator; determining a frequency region in which the phase difference shows large dependency on the concentration of the plating accelerator, from the characteristic figure of the relation between the phase difference and the frequency; selecting a specific frequency from the frequency region, and also determining a relationship between the concentration of the plating accelerator and the phase difference at the specific frequency beforehand; determining the phase difference by measuring an AC impedance of the plating solution to be used, at the specific frequency; and controlling the replenishing quantity of the plating accelerator so that the phase difference can be kept within a phase difference tolerance.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种湿镀法,其能够以相对容易的方式可靠地控制电镀促进剂的浓度并均匀地镀覆材料,并且提供一种湿镀装置。解决方案:该湿镀法包括:测量使用具有不同浓度的电镀促进剂的各种电镀液的交流阻抗;对于镀覆促进剂的每种浓度,准备表示相位差与频率之间的关系的特性图(波特图)。根据相位差与频率之间的关系的特性图,确定相位差对电镀促进剂浓度的依赖性大的频率区域。从所述频率区域中选择特定频率,并且还预先确定所述电镀促进剂的浓度与所述特定频率下的相位差之间的关系;通过在特定频率下测量待使用的镀液的交流阻抗来确定相位差;并控制电镀促进剂的补给量,以使相位差可保持在相位差容限之内。;版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2010229454A

    专利类型

  • 公开/公告日2010-10-14

    原文格式PDF

  • 申请/专利权人 FUJI ELECTRIC HOLDINGS CO LTD;

    申请/专利号JP20090076223

  • 发明设计人 SATO KEISUKE;

    申请日2009-03-26

  • 分类号C25D21/14;C25D3/38;

  • 国家 JP

  • 入库时间 2022-08-21 19:06:27

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