FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND METHOD FOR MANUFACTURING AMORPHOUS OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To reduce hysteresis by devising an oxide material to be used for a channel of a transistor.;SOLUTION: The method for manufacturing an amorphous oxide film which is used for a channel layer of a field effect transistor and contains Ga, In and Zn, In, Zn, Ga and Mg, In and Sn, In and Ga, or In and Zn includes: a process for arranging a substrate in a film formation device; and a process for forming an amorphous oxide film on the substrate by a sputtering film formation method while leading hydrogen gas and oxygen gas into the film formation device at respective partial pressures of 0.001 to 0.01 Pa and 0.008 to 0.5 Pa.;COPYRIGHT: (C)2010,JPO&INPIT