首页> 外国专利> METHOD FOR MANUFACTURING INFRARED SENSOR, INFRARED SENSOR AND QUANTUM-TYPE INFRARED GAS CONCENTRATION METER

METHOD FOR MANUFACTURING INFRARED SENSOR, INFRARED SENSOR AND QUANTUM-TYPE INFRARED GAS CONCENTRATION METER

机译:红外传感器,红外传感器和量子型红外气体浓度计的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an infrared sensor having a small simple sensor shape and capable of stable measurement against disturbances or variations in a measured gas such as flow rate variations and temperature variations, and to provide an infrared sensor.;SOLUTION: The method for manufacturing the infrared sensor includes: a first dicing step of forming a plurality of sensor elements 13 by cutting a wafer 10; a second dicing step of mounting the sensor elements 13 cut out in the first dicing step on a lead flame 14, and cutting the sensor elements 13 molded together with a wire 16 with a resin, and the lead flame 14 into pieces; and a filtering step of forming an optical filter 12 on a light receiving surface 13a of the sensor elements 13, the filtering step being performed before the first dicing step. By the method, the optical filter 12 is directly and integrally formed on the light receiving surface 13a of the sensor elements 13.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种制造红外线传感器的方法,该红外线传感器具有小的简单传感器形状并且能够针对被测气体的干扰或变化(例如流量变化和温度变化)进行稳定的测量,并且提供一种红外线传感器。解决方案:制造红外传感器的方法包括:第一切割步骤,通过切割晶片10形成多个传感器元件13;在第二切割步骤中,将在第一切割步骤中切出的传感器元件13安装在铅火焰14上,并且将与由导线16模制而成的传感器元件13和树脂以及铅火焰14切成片。以及在传感器元件13的光接收表面13a上形成滤光器12的滤波步骤,该滤波步骤在第一切割步骤之前执行。通过该方法,滤光器12直接且整体地形成在传感器元件13的光接收表面13a上。;版权所有:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2010133946A

    专利类型

  • 公开/公告日2010-06-17

    原文格式PDF

  • 申请/专利权人 ASAHI KASEI ELECTRONICS CO LTD;

    申请/专利号JP20090252230

  • 发明设计人 TOKUO SEIICHI;

    申请日2009-11-02

  • 分类号G01J1/02;G01J1/04;G01N21/61;G01N21/35;

  • 国家 JP

  • 入库时间 2022-08-21 19:05:34

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号