APPARATUS FOR MASS-PRODUCING SILICON-BASED THIN FILM, AND METHOD FOR MASS-PRODUCING THE SILICON-BASED THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a silicon-group thin-film mass-production equipment which is less apt to cause in-plane film-thickness distribution and is capable of reducing the size of a configuration.;SOLUTION: A plasma is generated in the silicon-group thin-film mass-production equipment 10 for producing a silicon-group thin film in each of transparent electrodes 62, by arranging each of the transparent electrodes 62 to face in parallel to each of a plurality of opposite electrodes 16 with some gap; introducing the material gas of the silicon-group thin film into a chamber 12; and applying a DC pulse voltage, sequentially or all together, to each of the opposite electrodes 16. Since the silicon-group thin film is produced by applying the DC pulse voltage, a high-frequency plasma-density distribution is less apt to be generated, as in a manner of applying a high-frequency intermittently to discharge it, and also the in-plane film-thickness distribution is less apt to be generated. Furthermore, turning-on period can be shortened, because the DC pulse voltage rises abruptly; consequently, a sheath can stop growing thicker at a transient state, before going into a steady state, which results in narrowing down of the interval between the opposite electrode 16 and the transparent electrode 62, and in size reduction of the equipment.;COPYRIGHT: (C)2010,JPO&INPIT