GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF PRODUCING THE SAME, GALLIUM NITRIDE-BASED LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD OF PRODUCING THE SAME DIODE

摘要

PPROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor light-emitting element having a structure capable of improving a degree of polarization. PSOLUTION: A light-emitting diode 11a has a semiconductor region 13, an InGaN layer 15, and an active layer 17. The semiconductor region 13 has a principal surface 13a exhibiting a semi-polarity and is made of GaN or AlGaN. The principal surface 13a of the semiconductor region 13 is inclined at an angle relative to a flat plane Sc orthogonal to a reference axis Cx of the [0001] axis of the principal surface 13a. The thickness DSB13/SBof the semiconductor region 13 is larger than a thickness DSBInGaN/SBof the InGaN layer 15, and the thickness DSBInGaN/SBof the InGaN layer 15 is 150 nm or more. The InGaN layer 15 is disposed just on the principal surface 13a of the semiconductor region 13 and is in contact with the principal surface 13a. The active layer 17 is disposed on a principal surface 15a of the InGaN layer 15, and is in contact with this principal surface 15a. The active layer 17 includes InGaN well layers 21. PCOPYRIGHT: (C)2010,JPO&INPIT