首页> 外国专利> METHOD FOR SEMICONDUCTOR SOLIDIFICATION WITH ADDITION OF DOPED SEMICONDUCTOR CHARGES DURING CRYSTALLIZATION

METHOD FOR SEMICONDUCTOR SOLIDIFICATION WITH ADDITION OF DOPED SEMICONDUCTOR CHARGES DURING CRYSTALLIZATION

机译:结晶过程中添加掺杂的半导体电荷的半导体凝固方法

摘要

PPROBLEM TO BE SOLVED: To provide a method for semiconductor solidification. PSOLUTION: The method for semiconductor solidification includes steps for: forming a bath of molten semiconductor 103 from a first charge 120 of semiconductor which includes dopants; and solidifying the molten semiconductor 103, and in addition includes, during solidification, the implementation of one or more steps for the addition of supplementary charges 120 of semiconductor, which also contains dopants, to the bath of molten semiconductor 103. The supplementary charges 120 of semiconductor are in solid or liquid form. Further, electron acceptor dopants are atoms of boron and electron donor dopants are atoms of phosphorus. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:提供一种半导体固化方法。解决方案:用于半导体固化的方法包括以下步骤:从包括掺杂剂的半导体的第一装料120形成熔融半导体103的浴;固化过程中,还包括在固化过程中执行一个或多个步骤,以向熔融半导体103的熔池中添加还包含掺杂剂的半导体附加电荷120。半导体为固体或液体形式。此外,电子受体掺杂剂是硼原子,电子给体掺杂剂是磷原子。

版权:(C)2010,日本特许厅&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号