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Method of solidifying a semiconductor by adding a doped semiconductor charge during crystallization

机译:通过在结晶过程中添加掺杂的半导体电荷来固化半导体的方法

摘要

The process comprises forming a bath (103) of molten semiconductor from a first charge of semiconductor comprising the dopants, and solidifying the molten semiconductor by melting additional charges of semiconductor and then adding to the molten bath under solid form. The solidification of the semiconductor lowers the variability of the molten bath according to the ratio of the predetermined variability factors as given in the specification. The dopants include electron acceptors with boron atoms and electron donors with phosphor atoms. The process comprises forming a bath (103) of molten semiconductor from a first charge of semiconductor comprising the dopants, and solidifying the molten semiconductor by melting additional charges of semiconductor and then adding to the molten bath under solid form. The solidification of the semiconductor lowers the variability of the molten bath according to the ratio of the predetermined variability factors as given in the specification. The dopants include electron acceptors with boron atoms and electron donors with phosphor atoms. The additional charges are added to the molten bath with high crystallization speed and low addition speed and according to an equation as given in the specification. A charge of semiconductor is added to the mass of solidified semiconductor each time to increase 1% of mass compared to the total mass of solidified semiconductor obtained at the end of solidification process. The solidification is carried out in a Bridgman type furnace. The furnace comprises a closed enclosure, and a crucible (102) under argon atmosphere. The bath is disposed in the crucible of the furnace. The addition of semiconductor charges is carried out using a dispensing device connected to a preheater. The time for the addition of additional charges is determined using a unit for controlling the dispensing device. The concentration of the dopants in the first charge of semiconductor is different from the same type of dopants in additional charges of semiconductor.
机译:该方法包括从包含掺杂剂的半导体的第一装料形成熔融半导体的熔池(103),以及通过熔融半导体的另外的装料并随后以固体形式添加到熔融浴中来固化熔融半导体。半导体的固化根据说明书中给定的预定可变性因子的比率降低了熔池的可变性。掺杂剂包括具有硼原子的电子受体和具有磷原子的电子给体。该方法包括从包含掺杂剂的半导体的第一装料形成熔融半导体的熔池(103),以及通过熔融半导体的另外的装料并随后以固体形式添加到熔融浴中来固化熔融半导体。半导体的固化根据说明书中给定的预定可变性因子的比率降低了熔池的可变性。掺杂剂包括具有硼原子的电子受体和具有磷原子的电子给体。根据说明书中给出的方程式,以高结晶速度和低添加速度将额外的进料添加到熔融浴中。与在固化过程结束时获得的固化半导体的总质量相比,每次将半导体电荷添加到固化半导体的质量中,以增加质量的1%。固化在Bridgman型炉中进行。该炉包括密闭的外壳和在氩气气氛下的坩埚(102)。熔池设置在熔炉的坩埚中。使用连接到预热器的分配设备进行半导体电荷的添加。使用用于控制分配装置的单元来确定添加额外费用的时间。半导体的第一电荷中的掺杂剂浓度不同于半导体的附加电荷中的相同类型的掺杂剂。

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