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PLASMA CVD SYSTEM AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM

机译:等离子体化学汽相淀积系统和制备磁性记录介质的方法

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD system where the distance between a cathode and the substrate to be film-deposited is elongated, thus a thin, dense film having high hardness can be deposited on the substrate to be film-deposited.;SOLUTION: The plasma CVD system comprises: a cathode electrode 3 arranged inside a chamber 2; an anode electrode 4 provided so as to surround the circumference of the cathode electrode 3; a holding part holding the substrate 1 to be film-deposited arranged so as to face the cathode electrode 3 and the anode electrode 4; a plasma wall 8 made into a float potential; an a.c. power source 5 connected to the cathode electrode 3; a d.c. power source 7 connected to the anode electrode 4; and a d.c. power source 12 electrically connected to the substrate 1 to be film-deposited. The inside diameter of the cylindrical plasma wall 8 is 100-200 mm, and the distance between the cathode electrode 3 and the substrate 1 to be film-deposited is 200-300 mm.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种等离子体CVD系统,其中阴极与待沉积的基板之间的距离变长,因此可以在待沉积的基板上沉积具有高硬度的薄而致密的膜。解决方案:等离子体CVD系统包括:布置在腔室2内的阴极电极3;阳极电极4设置成包围阴极电极3的周围。保持部,其以与阴极电极3及阳极电极4相对的方式配置有被成膜的基板1。等离子体壁8成为浮置电位。交流电源5连接到阴极电极3;直流电电源7连接到阳极电极4;和一个直流电电源12电连接到要成膜的衬底1。圆柱形等离子体壁8的内径为100-200 mm,阴极电极3与要成膜的基板1之间的距离为200-300 mm 。;版权所有:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2010007126A

    专利类型

  • 公开/公告日2010-01-14

    原文格式PDF

  • 申请/专利权人 UTEC:KK;

    申请/专利号JP20080167513

  • 发明设计人 OIKAWA AKIHISA;HONDA YUJI;

    申请日2008-06-26

  • 分类号C23C16/503;C23C16/26;G11B5/84;

  • 国家 JP

  • 入库时间 2022-08-21 19:04:54

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