首页> 外国专利> METHOD OF MANUFACTURING SUBSTRATE FOR OXIDE SUPERCONDUCTOR, METHOD OF MANUFACTURING OXIDE SUPERCONDUCTOR, AND DEVICE FOR FORMING CAP LAYER FOR OXIDE SUPERCONDUCTOR

METHOD OF MANUFACTURING SUBSTRATE FOR OXIDE SUPERCONDUCTOR, METHOD OF MANUFACTURING OXIDE SUPERCONDUCTOR, AND DEVICE FOR FORMING CAP LAYER FOR OXIDE SUPERCONDUCTOR

机译:氧化物超导体的基质的制造方法,氧化物超导体的制造方法以及氧化物超导体的覆盖层形成装置

摘要

PPROBLEM TO BE SOLVED: To shorten time and to reduce cost which formation of a cap layer takes, thereby to provide a method of manufacturing a substrate for an oxide superconductor which can manufacture an oxide superconductor with sufficient productivity, to provide a method of manufacturing an oxide superconductor, and to provide a device for forming a cap layer for an oxide superconductor used by each manufacturing method. PSOLUTION: In the method of manufacturing the substrate for the oxide superconductor, a reactivity DC sputtering method using metal targets 14a, 15a is used as a method of forming cap layer on an IBAD substrate 7. A cap layer to be formed is for example, is a CeOSB2/SBlayer. When a cap layer is formed, two or more metal targets 14a, 15a are prepared along a run system 11, and it is desirable to establish the temperature of the IBAD substrate 7 and the oxygen concentration of a gas introduced into a deposition space in a predetermined range. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:为了缩短时间并降低形成盖层所需的成本,从而提供一种用于制造氧化物超导体的基板的方法,该方法可以以足够的生产率制造氧化物超导体。制造氧化物超导体的方法,以及提供一种形成用于每种制造方法的氧化物超导体的盖层的装置。

解决方案:在用于氧化物超导体的基板的制造方法中,使用金属靶材14a,15a的反应性DC溅射法用作在IBAD基板7上形成覆盖层的方法。例如,是CeO 2 层。当形成盖层时,沿运行系统11准备两个或更多个金属靶材14a,15a,并且期望确定IBAD基板7的温度和引入到沉积空间中的沉积空间中的气体的氧气浓度。预定范围。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010123516A

    专利类型

  • 公开/公告日2010-06-03

    原文格式PDF

  • 申请/专利权人 FUJIKURA LTD;

    申请/专利号JP20080298440

  • 发明设计人 KAKIMOTO KAZUTOMI;

    申请日2008-11-21

  • 分类号H01B12/06;H01B13;C01G1;C01G25;

  • 国家 JP

  • 入库时间 2022-08-21 19:03:58

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