METHOD OF DEPOSITING LOW-PERMITTIVITY FILM, SUBSTRATE PROCESSING SYSTEM, METHOD OF FORMING DUAL DAMASCENE STRUCTURE, AND DUAL DAMASCENE STRUCTURE

摘要

PPROBLEM TO BE SOLVED: To provide a method of depositing a low-permittivity film by chemical vapor deposition or by the CVD method by chemically reacting a gas in an integral circuit manufacturing step. PSOLUTION: The method of depositing the low-permittivity film includes a step of depositing a conformal lining layer on a patterned metallic layer from a process gas having one or more silicon compounds and an oxidizing gas at a constant RF power level between about 10 W and about 200 W or at a pulse RF power level between about 20 W and about 500 W, and a step of depositing a gap filling layer on the lining layer. The silicon oxide is more effective in an integrating process of manufacturing a reliable dual damascene structure in a single deposition chamber by weakening an electrostatic coupling force between wiring lines. PCOPYRIGHT: (C)2010,JPO&INPIT