FERROELECTRIC MATERIAL, FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING FERROELECTRIC MATERIAL, AND FERROELECTRIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric material having a good ferroelectric characteristic and a good insulation property, and a ferroelectric element using the same.;SOLUTION: In this ferroelectric material formed of a metal oxide having a perovskite crystal structure, the metal oxide contains bismuth ferrate whose iron is substituted by manganese, and copper oxide and/or nickel oxide; the substitution ratio of manganese of the bismuth ferrate is 0.5-20 at.% with respect to a total amount of iron and manganese; and the addition amount of the copper oxide and/or the nickel oxide is 0.5-20 mol% with respect to the bismuth ferrate whose iron is substituted with manganese. This ferromagnetic element using the same is also provided.;COPYRIGHT: (C)2010,JPO&INPIT