首页> 外国专利> FERROELECTRIC MATERIAL, FERROELECTRIC FILM AND METHOD FOR MANUFACTURING THE FILM, FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME, FERROELECTRIC MEMORY AND PIEZOELECTRIC ELEMENT

FERROELECTRIC MATERIAL, FERROELECTRIC FILM AND METHOD FOR MANUFACTURING THE FILM, FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME, FERROELECTRIC MEMORY AND PIEZOELECTRIC ELEMENT

机译:铁电材料,铁电薄膜及其制造方法,铁电电容器及其制造方法,铁电存储器和压电元件

摘要

PPROBLEM TO BE SOLVED: To provide a ferroelectric material for forming a ferroelectric film having hysteresis characteristic excellent in squareness loop. PSOLUTION: The ferroelectric material contains an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site in a raw material liquid of a composite oxide described by the formula ABOSB3/SB. PCOPYRIGHT: (C)2005,JPO&NCIPI
机译:

要解决的问题:提供一种用于形成铁电膜的铁电材料,该铁电膜具有在矩形环路中优异的磁滞特性。

解决方案:铁电材料包含补偿A位空位的A位补偿组分和补偿复合氧化物原料液中B位空位的B位补偿组分。由公式ABO 3 描述。

版权:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005097073A

    专利类型

  • 公开/公告日2005-04-14

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20040002123

  • 申请日2004-01-07

  • 分类号C04B35/49;B41J2/045;B41J2/055;B41J2/16;C01G25/00;C01G33/00;H01B3/12;H01L21/316;H01L21/822;H01L27/04;H01L41/09;H01L41/187;

  • 国家 JP

  • 入库时间 2022-08-21 22:33:53

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