SILICON CARBIDE SINGLE CRYSTAL INGOT WITH SEED CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL WAFER, AND THIN FILM EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal ingot with a seed crystal for growing single crystals by which a large-diameter {0001} plane wafer having less dislocation defects and good quality can be produced, and to provide a silicon carbide single crystal substrate, silicon carbide epitaxial wafer, and a thin-film epitaxial wafer.;SOLUTION: The invention relates to the silicon carbide single crystal ingot with a seed crystal which is obtained by growing a silicon carbide single crystal using a manufacturing method including a process of growing it on a growing face of a seed crystal by a sublimation-recrystallization method using the seed crystal having a groove of ≥0.7 mm and 2 mm in width. The diameter of the ingot is ≥50 mm and ≤300 mm. The invention also relates to a silicon carbide single crystal substrate, a silicon carbide epitaxial wafer and a thin film epitaxial wafer, obtained from the ingot.;COPYRIGHT: (C)2010,JPO&INPIT