Dual surface roughening N-face high brightness LED

摘要

An active layer between a substrate, a buffer layer on the substrate, and the p-type layer and the n-type layer and the buffer layer, a tunnel junction adjacent to the p-type layer, n-type contact to the n-type layer and the tunnel junction with a door, a buffer layer, n-type layer, p-type layer, active region, and a III-nitride material grown nitrogen plane (N plane) orientation, a tunnel junction, the light-emitting diodes. substrate surface III-nitride material is deposited, is patterned to provide a roughening of the rear surface embedded. Upper surface of the tunnel junction which is also the upper surface of the III-nitride material is roughened.