Semiconductor structures and processing method using a phase separation less III-nitride material system 4 yuan

摘要

(57) Abstract Being III family nitride 4 original material system and the method of using for the semiconductor structure which includes the laser diode, the transistor and the photodetector, it decreases or removes phase separation, or, it discloses those which at the same time raise luminous efficiency. In illustrate execution feature, the said semiconductor structure the 1st InGaAlN layer which does not have substantially the phase separation of 1st electric conduction type, includes the 2nd InGaAlN layer which InGaAlN active layer, or the opposite electric conduction type which substantially do not have phase separation does not have phase separation substantially.