The remote plasma atomic formation evaporation device which utilizes DC bias and the

摘要

Because in the former plasma impression ALD device, the plasma occurs directly inside the reaction chamber, giving direct physical impact with to the baseplate and the thin film, there is a problem where the thin film is damaged. In addition, because it is not easy, to provide the mechanism which adjusts the energy of the plasma when unevenness of the thin film the plasma due to uneven becomes problem it is mainly reported. With this invention, it is arranged on one side of the internal space of the reaction chamber and the reaction chamber which possess the internal space the baseplate support stand where the baseplate for thin film formation is mounted, being installed outside the reaction chamber, it offers the ALD device which includes the source gas supply section which supplies the source gas for thin film formation inside the remote plasma occurrence section in order to supply the remote plasma to the internal space of the reaction chamber, the DC bias section, and the reaction chamber which can adjust the energy of the remote plasma.