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The fluorine dope SnO 2 surface as conductivity control law,

机译:氟掺杂SnO 2表面作为电导率控制规律,

摘要

PROBLEM TO BE SOLVED: To establish a manufacturing method of a highly efficient wave absorbing glass device having a transparent conductive material as a base, by controlling conductivity in the surface or the inside of the transparent conductive material, position-selectively or space-selectively.;SOLUTION: A mask 4 is disposed on the surface of a SnO2:F film 2 used as a transparent conductive material on a substrate 1. An entrance window 6 made of synthetic quartz is in close contact with the mask 4 and disposed on it, and water 5 used as a compound containing hydrogen is formed like a layer in an opening part 4a held between the substrate 1 and the entrance window 6 made of synthetic quartz. A laser beam 3 is irradiated on the surface of the transparent conductive SnO2:F film 2 through the entrance window 6 made of synthetic quartz and water 5, and the conductivity of the portion of the film 2 which has received the irradiation changes.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:通过控制透明导电材料的表面或内部的位置或空间选择的导电性,来建立以透明导电材料为基础的高效吸波玻璃器件的制造方法。 ;解决方案:在衬底1上用作透明导电材料的SnO 2 :F膜2的表面上设置一个掩模4。由合成石英制成的入射窗6与之紧密接触。然后,在形成于掩模4上的掩膜4上,在基板1与合成石英制的入射窗6之间的开口部4a中,以层状形成作为含有氢的化合物的水5。激光束3通过由合成石英和水5制成的入射窗6照射在透明导电SnO 2 :F膜2的表面上,并且该膜2的一部分的导电性已收到辐照更改。;版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP4547501B2

    专利类型

  • 公开/公告日2010-09-22

    原文格式PDF

  • 申请/专利权人 防衛省技術研究本部長;

    申请/专利号JP20070015130

  • 发明设计人 井上 成美;大越 昌幸;

    申请日2007-01-25

  • 分类号H01B13/00;C03C17/23;

  • 国家 JP

  • 入库时间 2022-08-21 19:00:27

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