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Growth of non-polar gallium nitride low dislocation density by hydride vapor phase growth method
Growth of non-polar gallium nitride low dislocation density by hydride vapor phase growth method
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机译:氢化物气相生长法生长低位错密度的非极性氮化镓
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摘要
Defective density is made to decrease considerably hydro ride vapor phase growth method (HVPE) the nonpolar characteristic a surface nitriding gallium which is used (GaN) epitaxial cross direction over growth of the membrane (LEO) with.
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