Polishing method of the compound semiconductor substrate, compound semiconductor substrate, method of manufacturing a compound semiconductor epitaxial substrate and a compound semiconductor epitaxial substrate

摘要

PROBLEM TO BE SOLVED: To provide the method of polishing a compound semiconductor substrate in which oxygen on the surface of the compound semiconductor substrate is reduced, the compound semiconductor substrate, the method of manufacturing a compound semiconductor epi-substrate, and the compound semiconductor epi-substrate.;SOLUTION: The method of polishing a compound semiconductor substrate comprises a preparation step (S10), a first polishing step (S20), and a second polishing step (S30). The compound semiconductor substrate is prepared in the preparation step (S10). The compound semiconductor substrate is polished by use of abrasive powder containing chlorine element in the first polishing step (S20). The substrate is polished by use of an alkaline aqueous solution which contains an inorganic builder and the pH of which is equal to or more than 8.5 and equal to or less than 13.0 in the second polishing step (S30) after the first polishing step (S20).;COPYRIGHT: (C)2009,JPO&INPIT