Evaluation method of ion implantation distribution, production manner of semiconductor equipment, and standard deviation r

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device according to a design value by evaluating a standard deviation in the crosswise direction of an ion implantation distribution from specific conditions based on an injection profile in a depth direction when ions are implanted into a substance to be implanted by changing an ion incident angle. ;SOLUTION: An ion implantation region 3 is formed by applying an ion beam 2 into an amorphous silicon layer 1 that is deposited on a silicon substrate with an ion incident angle of α=0°. Then, a standard deviation of ΔRpt of the ion implantation distribution is evaluated from Rpα=Rp0.cosα and ΔR2pα= R2pt.sin2α+ΔR2p0.cos2α based on an injection profile in a depth direction when ions are implanted into an amorphous silicon layer 1 that is a substance to be implanted by changing the ion incident angle α, where in the expression Rpα and Rp0 indicate projection ranges when the ion incident angle is α and 0°, respectively, and ΔRpα and ΔRp0 indicate standard deviations when the ion incident angle is α and 0°, respectively.;COPYRIGHT: (C)2000,JPO