The system and the method of optimizing the crystallization of amorphous silicon

摘要

It can use the laser beam profile of the specification which possesses the strength peak in one edge in the directivity crystallization system of the thin beam where silicon layer of the glass baseplate annealing is done. That system melts the all of the part where the silicon layer which brings cross direction grain growth is controlled spatially. Just step size of specification advancing the baseplate or the laser, layer the whole silicon is crystallized silicon layer the continuation which is by the laser by placing under influencing the shot . As for cross direction grain growth, the convex section is formed in the center of the melting territory which has the necessity re-to be melted. Therefore, as for step size, in order to make melting the convex section secure, between the shot which is continued, namely, it is necessary to make the sufficient pile of the melting zone possible. This needs the step size which is smaller than half of beam width. Following to the system and method of this invention, laser profile of the specification which is used increases, step size raises throughput with that, at the same time decreases cost.