Being the buffer structure which reforms the silicon substrate for the mannered null succeeding target material accumulation which forms buffer structure and the said

摘要

For example using the buffer structure 1 which, includes the IIIB group element of two or more the composition inclined nitride alloy formation which such as La, Y, Sc or Ac includes 5 reforming silicon substrate 3, generating the general substrate which for example can make the consecutive target material 7 of GaN accumulate and the like on that, it generates the semiconductor device of electronics/optical application. The grating constant L which can as a result with thickness T changes over the whole substrate.