首页> 外国专利> Being the abrasive cloth which is used in order to grind the process manner of the abrasive cloth and the abrasive cloth

Being the abrasive cloth which is used in order to grind the process manner of the abrasive cloth and the abrasive cloth

机译:是用来研磨砂布和砂布的加工方式的砂布

摘要

Mean value of sum total of the groove cubic measure where as for this invention, being the abrasive cloth in order to grind the semiconductor baseplate, the groove where at least it possesses radial pattern on the said cloth surface is formed, as for the said groove, (in the baseplate falling perpendicularly section/the area of the baseplate) of 0.06 or more and to be things such as of 0.23 or less, in addition, the said groove to be something which than groove depth of the groove part where groove depth of the groove part which is located on central side than the aforementioned baseplate is directly under the aforementioned baseplate was shallower formed, the intersection to be piled up with the groove and the groove in the central part of radial pattern of the aforementioned grooveIt is the abrasive cloth and its process method and the production method of the baseplate which uses this of featuring that it is something which does not exist directly under the aforementioned baseplate. Because of this, at the time of semiconductor baseplate grinding it is possible to grind with high degree of evenness the abrasives the necessary quantity by being supplied to the baseplate center, furthermore peeling and twists, Bali not to occur, the abrasive cloth and its process method and the production method of the baseplate of not attaching the scratch to the semiconductor baseplate surface are offered.
机译:本发明中,作为用于磨削半导体基板的砂布,是在上述布表面上形成至少具有放射状的花纹的凹槽的三次方求和的平均值。另外,上述槽是槽深度大于槽部的槽深度的值(在基板的垂直截面/基板的面积上)为0.06以上且为0.23以下的值。位于比上述基板正中央的槽部的正下方的槽部的厚度变浅,在上述槽的放射状的中央部,与槽和槽重叠的交叉点是磨料利用该布及其基板的加工方法和制造方法,其特征在于在上述基板的正下方不存在。因此,在对半导体基板进行研磨时,通过将其供给至基板中心,能够以较高的均匀度研磨所需量的磨料,此外,不会发生剥落和扭曲,Bali裂,砂布及其加工。提供了不将划痕附着在半导体基板表面上的基板的制造方法和制造方法。

著录项

  • 公开/公告号JP4449905B2

    专利类型

  • 公开/公告日2010-04-14

    原文格式PDF

  • 申请/专利权人 信越半導体株式会社;

    申请/专利号JP20050514176

  • 发明设计人 添田 康嗣;

    申请日2004-09-17

  • 分类号B24B37/00;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 18:58:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号