Magnetic random access memory, data writing method of a magnetic random access memory, and a method of manufacturing a magnetic random access memory

摘要

PPROBLEM TO BE SOLVED: To reduce a switching magnetic field and to prevent erroneous writing. PSOLUTION: The magnetic random access memory comprises first and second writing lines WLi and BLj that cross each other, a magnetoresistive effect element MTJ arranged at the intersection between the first and second writing lines WLi and BLj, and driver/sinker 1, 2, 3, and 4 for executing data writing by using the first quadrant and the third quadrant of the magnetoresistive effect element MTJ. The magnetoresistive effect element MTJ has unsymmetric astroid characteristics, with the first and third quadrants being recessed farther than the second and fourth quadrants. PCOPYRIGHT: (C)2007,JPO&INPIT