In order in-plane orientation to do on the aforementioned principal plane of the ZnO based compound semiconductor luminous element and

摘要

PROBLEM TO BE SOLVED: To provide an element that obtains a ZnO-family compound semiconductor with superior crystallizability, and uses the ZnO-family compound semiconductor such as a semiconductor light-emitting device, where the characteristics of the element have been improved. ;SOLUTION: A ZnO-family compound semiconductor layer 2 is subjected to epitaxial growth on the main surface (A surface) of a sapphire substrate 1, using a surface orthogonally crossing the horizontal surface of the sapphire substrate 1, for example, the A surface (11-20) as the main surface. When a semiconductor light-emitting device is to be constituted lamination is successively made so that a light emission layer formation part for pinching an active layer with smaller band gap than a clad layer is composed of an n-type cladding layer consisting of, for example, the ZnO compound semiconductor layer and a p-type cladding layer.;COPYRIGHT: (C)2001,JPO