Method of manufacturing a target made of high purity Ti material used for magnetron sputtering

摘要

PROBLEM TO BE SOLVED: To provide a production process of a high purity Ti material for obtaining a high reliability semiconductor element by employing a film composed of a Ti nitride in a contact barrier layer, a gate electrode or the like thereby suppressing leak current of a semiconductor element.;SOLUTION: In the production process of a high purity Ti material for magnetron sputtering apparatus, Al is removed from a Ti material with its concentration held to 3 ppm or less by electron beam dissolution process in order to form the contact barrier layer composed of a Ti nitride in a semiconductor element having a junction depth of 0.1-0.3 μm in the source-drain region with atomic number of 1×10¹⁸ /cm³ or less.;COPYRIGHT: (C)2006,JPO&NCIPI