In order for the flow rate of the N supply raw materials /Al supply raw materials to become

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride film of low dislocation, using an easy method.;SOLUTION: On a C surface sapphire substrate, after NH3 is supplied at 1,200°C and is nitrided, TMA as an AL feedstock and NH3 as a nitrogen source material are supplied, in a flow rate mole ratio of NH3/TMA=450, and an ALN film is epitaxially grown, under a pressure of 15 Torr. A ground film, which has an uneven surface and is composed of the ALN containing Al of at least ≥70 at.%, is formed. Next, a targeted GAN film is formed on the ground film by using a normal MOCVD method.;COPYRIGHT: (C)2006,JPO&NCIPI