Manufacturing method of the ruthenium thin film which uses the organic ruthenium complex and the particular ruthenium complex

摘要

General system of this invention (1 1)(In formula, as for X, general system (1 2)So the basis which is shown (in formula, R ^a and R ^b carbon atom several 1 - 5 direct or show the alkyl group of ramification condition.)As for Y, general system (the 1 2) with the basic or carbon atom several 1 - 8 which is shown direct or the alkyl group of ramification condition, as for Z, the alkyl group of the hydrogen atom or carbon atom several 1 - 4 is shown. L shows the unsaturated hydrocarbon chemical compound which at least has two double bonds.)As so the organic ruthenium complex which is shown, bis (asechiruasetonato) (1,5 - hexa- diene) ruthenium, and bis (asechiruasetonato) (1,3 - pentadiene) ruthenium has fusion point low, is superior in stability at the same time vis-a-vis the moisture, the air and heat, it is suitable for the membrane with CVD method.