SILICON MATERIAL SURFACE ETCHING FOR LARGE POLYSILICON THIN FILM DEPOSITION AND STRACTURE

摘要

A method for forming a photovoltaic cell. The method includes providing a first silicon material characterized by a resistivity less than about 0.5 ohm cm⁻¹ and a first conductive type impurity characteristic. The first silicon material forms a first conductor layer for a photovoltaic cell. The method deposits a polysilicon film material overlying the surface region. In a specific embodiment, the polysilicon material has the first conductive type impurity characteristics and a resistivity greater than about 0.5 ohm cm⁻¹. In a specific embodiment, the first polysilicon film material is characterized by a grain size greater than about 0.1 mm. The method forms a second conductive type impurity region having a second conductive type impurity characteristics opposite to the first conductive type impurity characteristics in a vicinity of a first surface region of the polysilicon film material. A second conductor layer overlies the second conductive type impurity region to form a photovoltaic cell.