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2T NOR-TYPE NON-VOLATILE MEMORYT CELL ARRAY AND METHOD OF PROCESSING DATA OF 2T NOR-TYPE NON-VOLATILE MEMORY
2T NOR-TYPE NON-VOLATILE MEMORYT CELL ARRAY AND METHOD OF PROCESSING DATA OF 2T NOR-TYPE NON-VOLATILE MEMORY
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机译:2T NOR型非易失性存储单元阵列及2T NOR型非易失性存储数据的处理方法
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摘要
Provided are a 2-transistor (2T) NOR cell array which includes at least a cell, and a cell comprising a selection transistor and a storage transistor including a charge storage floating gate or a charge storage dielectric, and a method of processing data of a 2T NOR flash memory cell which is used to store data in a 2T NOR cell array, read the stored data, and erase the stored data. The 2T NOR cell array includes a selection transistor and a storage transistor. The selection transistor includes a terminal connected to a bit line and a gate terminal applied with a selection signal. The storage transistor includes a terminal connected to the other terminal of the selection transistor, the other terminal connected to a common source line, and a gate applied with a control voltage. A back bias voltage is applied to bulk regions of the selection transistor and the storage transistor when a programming operation is performed, and a floating gate or a charge storage dielectric is provided between the gate and the bulk region of the storage transistor.
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