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MEASURING STRAIN OF EPITAXIAL FILMS USING MICRO X-RAY DIFFRACTION FOR IN-LINE METROLOGY
MEASURING STRAIN OF EPITAXIAL FILMS USING MICRO X-RAY DIFFRACTION FOR IN-LINE METROLOGY
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机译:在线X射线学中使用微X射线衍射测量外延薄膜的应变
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摘要
In a method for use of x-ray diffraction to measure the strain on the top silicon germanium layer of an SOI substrate, the location of the peak diffraction area of an upper silicon layer of the SOI substrate is determined by first determining the peak diffraction area of the upper silicon layer on a reference pad (where the SOI thickness is about 700-900 Angstroms) within a die formed on a semiconductor wafer. The x-ray beam then moves to that location on the pad of interest to be measured and begins the XRD scan on the pad of interest to ultimately determine the strain of the top silicon germanium layer of the pad of interest
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