A 4-Point Bending Apparatus for X-Ray Diffraction System and Measuring Method for Thin Film Stress-Strain Curve Using the Apparatus

摘要

The present invention provides for a four-point bending device X- ray diffraction and thin film using the material stress-strain behavior measurement relates to a process, can be attached to the X- ray diffractometer, and artificially four-point bending device that generates stress and strain the film specimen is bent with the upper part of the body, for bending, the lower portion of the micrometer to control the intensity of the bending but consists of, and the two pairs of thin film specimen support part has a fixed upper part of the body, is composed of two pairs of thin-film specimen support is elevated, the two pairs of thin-film specimen support part which is connected with the lifting micrometer to micrometer and a four-point bending apparatus for X- ray diffraction, characterized in that the lifting by, ; Scan a predetermined thin film is a thin film deposited to a thickness of a thin film test piece with a laser displacement meter, and the residual stress generated in the deposited therefrom measuring the bending curvature of the test piece (S10) and; Step (S20) and measuring the diffraction peak information of a thin film specimen according to the change of the diffraction angle in the X- ray diffraction test in a state that is not subject to bending to the thin-film specimen; Step (S30) and in the thin film test pieces for measuring the X- ray tension to the thin film surface by the rotation of the micrometer of the four-point bending device for diffraction / compressive stress by varying the curvature of the bend the laser displacement meter; The (S30) and at the same time, tension / compression step stress is measured diffraction peak information of a thin film specimen in accordance with the change of the diffraction angle in the X- ray diffraction test on the thin film is applied to the specimen to obtain the strain of the thin-film specimen (S40); including X- ray diffraction for the thin film material 4 with respect to bending stress device which comprises: - to provide a strain measurement method