首页> 外国专利> METHOD OF FORMING CARBON NANOTUBE ON SEMICONDUCTOR SUBSTRATE, METHOD OF FORMING SEMICONDUCTOR METAL WIRE USING THE SAME, AND METHOD OF FABRICATING INDUCTOR USING THE SAME

METHOD OF FORMING CARBON NANOTUBE ON SEMICONDUCTOR SUBSTRATE, METHOD OF FORMING SEMICONDUCTOR METAL WIRE USING THE SAME, AND METHOD OF FABRICATING INDUCTOR USING THE SAME

机译:在半导体基体上形成碳纳米管的方法,使用相同方法形成半导体金属线的方法以及使用相同方法制造导体的方法

摘要

A method of fabricating a semiconductor device by filling carbon nanotubes in a recess is disclosed. The method of fabricating the semiconductor device comprises patterning a mold on a substrate, coating carbon nanotubes on an entire surface of the recess and the mold formed by the patterning, filling the carbon nanotubes coated on the an entire surface of the mold in the recess, and removing the mold.
机译:公开了一种通过在凹部中填充碳纳米管来制造半导体器件的方法。该半导体器件的制造方法包括:在基板上对模具进行构图;在凹部的整个表面上涂覆碳纳米管;以及通过构图形成的模具;在凹部中,将在模具的整个表面上涂覆的碳纳米管填充在凹部中;并取出模具。

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