NON-VOLATILE MEMORY GENERATING READ RECLAIM SIGNAL AND MEMORY SYSTEM

摘要

A non-volatile memory device includes a memory cell array including memory blocks, an ECC circuit receiving read data from the memory cell array and detecting error bits, wherein the ECC circuit is capable of detecting and correcting a maximum number of error bits, a counter counting detected error bits and generating an error-possible data indication when the counted error bits exceed a minimum error threshold, wherein the minimum error threshold is less than the maximum number of error bits, and a read reclaim indicator receiving the error-possible data indication and generating read reclaim indication for the memory block storing the read data.