首页> 外国专利> DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE

DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE

机译:使用连续导数来表征光刻掩模的可制造性,以连续规模来表征可制造性

摘要

The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
机译:确定在制造半导体器件的实例中使用的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对,以确定在制造光刻掩模时的制造损失。遮罩布局数据包括多边形,其中每个多边形都有许多边。每个目标边缘对由一个或多个多边形的两个边缘定义。确定光刻掩模的可制造性,包括制造光刻掩模时的制造损失。确定制造损失是基于所选择的目标边缘对。确定光刻掩模的可制造性使用以连续规模表征光刻掩模的可制造性的连续导数。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模时的制造损失。

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