首页> 外国专利> DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE

DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE

机译:使用连续导数确定连续规模上的可制造性,确定光刻模板的可制造性

摘要

PURPOSE: A method for determining the manufacturability of a lithographic mask using continuous derivatives is provided to determine the manufacturability of the lithographic mask by selecting a plurality of target-edge pairs from the mask layout data of the lithographic mask. CONSTITUTION: A target-edge is selected from the mask layout data of a lithographic mask(402). A plurality of target-edge pairs is selected(404). The manufacturability of the lithographic mask is determined(406). The manufacturability of the lithographic mask is output(408). The lithographic mask is optimized based on the manufacturability(410). The lithographic mask is manufactured(412). The instance of a semiconductor device is manufactured using the lithographic mask(414).
机译:目的:提供一种用于使用连续导数确定光刻掩模的可制造性的方法,以通过从光刻掩模的掩模布局数据中选择多个目标边缘对来确定光刻掩模的可制造性。构成:从光刻掩模的掩模布局数据中选择目标边缘(402)。选择多个目标边缘对(404)。确定光刻掩模的可制造性(406)。输出光刻掩模的可制造性(408)。基于可制造性来优化光刻掩模(410)。制造光刻掩模(412)。使用光刻掩模(414)来制造半导体器件的实例。

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