NANOSCALE MULTI-JUNCTION QUANTUM DOT DEVICE AND FABRICATION METHOD THEREOF
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机译:纳米尺度多结量子点装置及其制造方法
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摘要
The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.
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