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SEMICONDUCTOR MEMORY, SEMICONDUCTOR MEMORY SYSTEM USING THE MEMORY, AND METHOD FOR MANUFACTURING QUANTUM DOT USED IN SEMICONDUCTOR MEMORY
SEMICONDUCTOR MEMORY, SEMICONDUCTOR MEMORY SYSTEM USING THE MEMORY, AND METHOD FOR MANUFACTURING QUANTUM DOT USED IN SEMICONDUCTOR MEMORY
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机译:半导体存储器,使用该存储器的半导体存储器系统以及制造用于半导体存储器的量子点的方法
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摘要
A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.
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