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Self-aligned tunneling pocket in field-effect transistors and processes to form same
Self-aligned tunneling pocket in field-effect transistors and processes to form same
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机译:场效应晶体管中的自对准隧穿袋及其形成方法
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摘要
A microelectronic device includes a tunneling pocket within an asymmetrical semiconductive body including source- and drain wells. The tunneling pocket is formed by a self-aligned process by removing a dummy gate electrode from a gate spacer and by implanting the tunneling pocket into the semiconductive body or into an epitaxial film that is part of the semiconductive body.
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