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Heterojunction Transistors Having Barrier Layer Bandgaps Greater Than Channel Layer Bandgaps and Related Methods
Heterojunction Transistors Having Barrier Layer Bandgaps Greater Than Channel Layer Bandgaps and Related Methods
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机译:势垒层带隙大于沟道层带隙的异质结晶体管及其相关方法
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摘要
A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer is between the barrier layer and the energy barrier. The barrier layer may have a bandgap greater than a bandgap of the channel layer, and a concentration of indium (In) in the energy barrier may be greater than a concentration of indium (In) in the channel layer. Related methods are also discussed.
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