首页> 外国专利> METHOD AND SYSTEM FOR PROVIDING MAGNETIC ELEMENTS HAVING ENHANCED MAGNETIC ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS

METHOD AND SYSTEM FOR PROVIDING MAGNETIC ELEMENTS HAVING ENHANCED MAGNETIC ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS

机译:提供具有增强的磁各向异性的磁性元件的方法和系统以及使用这种磁性元件的存储器

摘要

A method and system for providing a magnetic element are described. The magnetic element includes pinned and free layers, a nonmagnetic spacer layer between the free and pinned layers, and a stability structure. The free layer is between the spacer layer and the stability structure. The free layer has a free layer magnetization, at least one free layer easy axis, and at least one hard axis. The stability structure includes magnetic layers and is configured to decrease a first magnetic energy corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy corresponding to the free layer magnetization being aligned with the at least one hard axis. The magnetic element is configured to allow the free layer magnetization to be switched to between states when a write current is passed through the magnetic element.
机译:描述了一种用于提供磁性元件的方法和系统。磁性元件包括固定层和自由层,在自由层和固定层之间的非磁性间隔层以及稳定结构。自由层在间隔层和稳定性结构之间。所述自由层具有自由层磁化强度,至少一个自由层易轴和至少一个硬轴。稳定结构包括磁性层,并且被构造成减小对应于与至少一个易轴对准的自由层磁化强度的第一磁能,而不减小对应于与至少一个硬轴对准的自由层磁化强度的第二磁能。轴。磁性元件被配置为当写入电流流过磁性元件时允许自由层磁化在状态之间切换。

著录项

  • 公开/公告号US2010140726A1

    专利类型

  • 公开/公告日2010-06-10

    原文格式PDF

  • 申请/专利权人 DMYTRO APALKOV;YUNFEI DING;

    申请/专利号US20080328255

  • 发明设计人 DMYTRO APALKOV;YUNFEI DING;

    申请日2008-12-04

  • 分类号H01L43/02;H01L43/12;

  • 国家 US

  • 入库时间 2022-08-21 18:53:29

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